Failure analysis of ESD-stressed SiC MESFET

Failure analysis of ESD-stressed SiC MESFET

a CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France b Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France c Université de Lyon, CNRS, Laboratoire AMPERE, UMR 5005, INSA de Lyon, F-69621 Villeurbanne, France d Institut de Microelectrónica de Barcelona-Centre Nacional de Microelectrónica (IMB-CNM), Consejo Superior de Investigaciones Científicas (CSIC), Universitat Autònoma de Bar...

Esd Failure Analysis Methodology

This paper reviews Failure Analysis methods and discusses the merits and pitfalls associated with some of the more common techniques as they relate to ESD. Although advanced methods such as the Focused Ion Beam will be discussed, the importance of more traditional methods such as liquid crystal, emission microscopy, passive voltage contrast and mechanical polishing will be emphasized. Case hist...

A novel SiC MESFET with recessed P-Buffer layer

We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the p-buffer layer region near the drain under the gate. The length and thickness of the channel recess into the p-buffer layer are larger than the pbuffer recess into the channel...

Relative Stability Analysis of MESFET under Illumination

The paper presents the relative stability behavior of the GaAs MESFET under varied illumination and frequency. The model of the device is developed in MATLAB and explains the shifts in the pole positions of transfer function with illumination and frequency for the first time. The variations of minority carrier life time and signal to noise ratio various optical illuminations under different fre...

Conductance Deep-Level Transient Spectroscopic Study of 4H-SiC MESFET and Traps